inductively coupled plasma (ICP) etcher 

Materials: Si, SiC, SiN, SiO2, SiON, TiO2, Ta2O5, Nb2O5, Nb, Ge, Diamond, T, W, Ir, VaO2, Al2O3, LiNbO3, Mo, Ni, LiTaO3, Polyimide, HfO2 

Gases: BCL3, Cl2, SF6, CF4, CHF3, O2, Ar, N2, 

He-Backside cooling 

cryogenic cooling down to -100 °C 

Bosch process possible 

Sample size: max 8" Wafer or 6” mask, min chip size 10x10 mm